absolute maximum ratings t c electrical characteristics t =25 c unless otherwise specified c =25 c unless otherwise specified symbol parameter test conditions values unit v maximum d.c. reverse voltage r 12 00 v v maximum repetitive reverse voltage rrm 12 00 v i average forward current f(av) t c 6 0 = 110 c a i rms forward current f(rms) t c 84 =110 c a i non - repetitive surge forward current fsm t j 5 0 0 = 45 c , t=10ms, 50hz, sine a p power dissipation d 312 w t junction temperature j - 40 to +150 c t storage temperature range stg - 40 to +1 50 c torqu e module - to - sink recommended m 3 1.1 n m r thermal resistance jc junction - to - case 0. 4 c /w weight 6.0 g symbol parameter test conditions min. typ. max. unit i reverse leakage current rm v r -- = 12 00 v -- 50 0 a v r = 12 00 v, t j -- = 1 25 c -- 5 m a v forward voltage f i f -- = 60a 2.10 -- v i f = 60a , t j -- = 125 c 1.75 v t reverse recovery time r r i f = 1 a , v r = 30 v, di f - - /dt= - 2 00a/s 40 -- ns t reverse recovery time r r v r = 600 v, i f = 60 a di f /dt= - 2 00a/s, t j -- =25 c 9 0 -- ns i max. reverse recovery current rrm -- 7. 5 -- a t reverse recovery time r r v r = 600 v, i f = 60 a di f /dt= - 2 00a/s, t j -- =1 25 c 320 -- ns i max. reverse recovery current rrm -- 1 4 -- a ? MUR60120 pb free plating product MUR60120 60 ampere,1200 volt switchmode single fast recovery epitaxial diode pb ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature MUR60120 using the lastest fred fab process(planar passivation chip) with ultrafast and soft recovery characteristic. to-247-2l internal configuration cathode(bottom side metal heatsink) cathode anode base backside ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 rev.05
duty 0.5 0.2 0.1 0.05 single p ulse 1 1 0 - 1 10 - 2 10 - 3 10 - 4 z thjc (k/w) 1 10 - 1 10 - 2 10 - 3 10 - 4 rectangular pulse duration (seconds) fig 6 . transient thermal impedance i f (a) v f v figure1. forward voltage drop vs forward current t j = 1 25 c t j =25 c 120 100 80 40 20 0 0 0.5 1.5 2.0 2.5 3.0 di f /dt a/ s figure 2 . reverse recovery time vs di f /dt 1 00 0 8 00 6 00 4 00 2 00 0 0 100 t rr ( ns ) 200 300 400 500 v r = 60 0 v t j =1 25 c i f = 12 0a i f = 3 0a i f = 6 0a i rrm (a) di f /dt a/ s figure 3 . reverse recovery current vs di f /dt 100 80 60 40 20 0 0 200 400 600 800 1000 di f /dt a/ s figure 4 . reverse recovery charge vs di f /dt 1 00 0 8 00 6 00 4 00 2 00 0 0 2 q rr ( c ) 4 6 8 10 v r = 60 0 v t j =1 25 c i f = 12 0a i f = 3 0a i f = 6 0a v r = 60 0 v t j =1 25 c i f = 12 0a i f = 6 0a i f = 3 0a 60 1.0 k f 0 0. 2 0. 8 1. 2 1. 4 i rrm q rr t rr t j ( c ) figure 5 . dynamic parameters vs junction temperature 0 25 50 1 00 1 50 75 125 1.0 0. 4 0.6 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3 rev.05 ? MUR60120
fig 7 . diode reverse recovery t est circuit and waveform i f di f /dt t rr i rrm q rr 0.25 i rrm 0.9 i rrm di m ens ions in millimeters fig 8 . package outline ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3 rev.05 ? MUR60120
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